Interface-Induced Polarization in SrTiO3-LaCrO3Superlattices

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Switchable induced polarization in LaAlO3/SrTiO3 heterostructures.

Demonstration of a tunable conductivity of the LaAlO(3)/SrTiO(3) interfaces drew significant attention to the development of oxide electronic structures where electronic confinement can be reduced to the nanometer range. While the mechanisms for the conductivity modulation are quite different and include metal-insulator phase transition and surface charge writing, generally it is implied that t...

متن کامل

Oxygen Vacancy Induced Flat Phonon Mode at FeSe /SrTiO3 interface

A high-frequency optical phonon mode of SrTiO3 (STO) was found to assist the high-temperature superconductivity observed recently at the interface between monolayer FeSe and STO substrate. However, the origin of this mode is not clear. Through first-principles calculations, we find that there is a novel polar phonon mode on the surface layers of the STO substrate, which does not exist in the ST...

متن کامل

Electrostriction at the LaAlO3/SrTiO3 interface.

We present a direct comparison between experimental data and ab initio calculations for the electrostrictive effect in the polar LaAlO(3) layer grown on SrTiO(3) substrates. From the structural data, a complete screening of the LaAlO(3) dipole field is observed for film thicknesses between 6 and 20 uc. For thinner films, an expansion of the c axis of 2% matching the theoretical predictions for ...

متن کامل

Conducting channel at the LaAlO3/SrTiO3 interface

Z. Huang,1 X. Renshaw Wang,1,2 Z. Q. Liu,1,2 W. M. Lü,1,3 S. W. Zeng,1,2 A. Annadi,1,2 W. L. Tan,2 X. P. Qiu,3 Y. L. Zhao,1,2 M. Salluzzo,4 J. M. D. Coey,1,5 T. Venkatesan,1,2,3 and Ariando1,2,* 1NUSNNI-NanoCore, National University of Singapore, 117411 Singapore, Singapore 2Department of Physics, National University of Singapore, 117542 Singapore, Singapore 3Department of Electrical and Comput...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Advanced Materials Interfaces

سال: 2016

ISSN: 2196-7350

DOI: 10.1002/admi.201500779